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| Previous Datasheet Index Next Data Sheet PD -9.1271 IRFD214 HEXFET(R) Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt. HD-1 VDSS = 250V RDS(on) = 2.0 ID = 0.45A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.45 0.29 3.6 1.0 0.0083 20 57 0.45 0.10 4.8 -55 to + 150 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA Junction-to-Ambient Min. -- Typ. -- Max. 120 Units C/W To Order Revision 0 Previous Datasheet Index Next Data Sheet IRFD214 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 250 -- -- V VGS = 0V, ID = 250A -- 0.39 -- V/C Reference to 25C, ID = 1mA -- -- 2.0 VGS = 10.0V, ID = 0.27A 2.0 -- 4.0 V VDS = VGS, ID = 250A 0.90 -- -- S VDS = 50V, ID = 1.6A -- -- 25 VDS = 250V, VGS = 0V A -- -- 250 VDS = 200V, VGS = 0V, TJ = 125C -- -- 100 VGS = 20V nA -- -- -100 VGS = -20V -- -- 8.2 ID = 2.7A -- -- 1.8 VDS = 200V nC -- -- 4.5 VGS = 10V, See Fig. 6 and 13 -- 7.0 -- VDD = 125V -- 7.6 -- ID = 2.7A ns -- 16 -- RG = 24 -- 7.0 -- RD = 45, See Fig. 10 -- 4.0 -- Between lead, nH -- 6.0 -- 6mm (0.25in.) from package and center of die contact -- 140 -- VGS = 0V -- 42 -- pF VDS = 25V -- 9.6 -- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol -- -- 0.45 showing the A integral reverse -- -- 3.6 p-n junction diode. -- -- 2.0 V TJ = 25C, IS = 0.45A, VGS = 0V -- 190 390 ns TJ = 25C, IF = 2.7A -- 0.64 1.3 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 2.7A, di/dt 65A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. VDD = 50V, starting TJ = 25C, L = 28mH RG = 25, IAS = 1.8A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRFD214 ID, Drain Current (Amps) Fig 1. Typical Output Characteristics, T C = 25oC ID, Drain Current (Amps) Fig 2. Typical Output Characteristics, TC = 150oC Fig 3. Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (Amps) Fig 4. Normalized On-Resistance Vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRFD214 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (volts) Capacitance (pF) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current (Amps) Fig 7. Typical Source-Drain Diode Forward Voltage ID, Drain Current (Amps) Fig 8. Maximum Safe Operating Area To Order Previous Datasheet Index Next Data Sheet IRFD214 ID, Drain Current (Amps) Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response, (ZJC) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order Previous Datasheet Index Next Data Sheet IRFD214 Fig 12a. Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet IRFD214 dv/dt Test Circuit Peak Diode Recovery Test Circuit To Order Previous Datasheet Index Next Data Sheet IRFD214 Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. To Order |
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